Comparative study of point defects induced in PbTe thin films doped with Ga by different techniquesстатья
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Аннотация:The comparison of the experimental results, which have been received in studies of chemical composition, crystal structure, and electronic properties of Ga-doped films on Si (1 0 0) and SiO2/Si (10 0) substrates, is presented in the present work. The Ga-doped PbTe films have been fabricated by two different ways. In contradistinction to the films, which have been doped by two zones annealing, the films synthesized by one-stage method using PbTe<Ga> layers demonstrate the non-monotone dependence of lattice parameter and charge carrier densities with the Ga impurity concentration. Complicated amphoteric (donor or acceptor) behaviour of Ga atoms may be explained by different mechanisms of substitution Ga-Pb(x) or implantation Ga-i(...) of impurity atoms in the crystal structure of lead telluride. (C) 2003 Published by Elsevier Ltd.