Self-trapped excitons in semiconductor quantum wires inside a polar dielectric matrixстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 2 марта 2016 г.
Аннотация:We analyze theoretically the conditions of the exciton self-trapping in a thin semiconductor wire, imbedded into a polar dielectric matrix. We show that in such systems the exciton self-trapping can be strongly enhanced due to (i) increased exciton-phonon coupling and (ii) possibility of spatial charge separation in the exciton. We use the standard adiabatic polaron approach to evaluate the effective exciton Hamiltonian, which takes into account the exciton-optical phonon interaction as well as the electric field renormalization due to image charges, and calculate variationally the self-trapped exciton binding energy and the Stokes shift between the peak energies in the optical absorption and emission.