Dielectric enhancement of excitons in near-surface quantum wellsстатья
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Дата последнего поиска статьи во внешних источниках: 2 марта 2016 г.
Аннотация:The excitons in near-surface InxGa1-xAs/GaAs QW's have been investigated by photoluminescence excitation and magnetophotoluminescence spectroscopy. The dielectric enhancement of excitons is demonstrated by measuring the splitting of the 2s and Is excitons and the diamagnetic shift of the Is exciton state. In agreement with theoretical calculations the exciton binding energy is found to be enhanced 1.5 times by the dielectric confinement for 5-nm-wide quantum wells with cap layer thicknesses below 3 nm.