Electronic Structure of Ge(111)-(2 x 1) Surface in the Presence of Doping Atoms. Ab initio Analysis of STM Dataстатья
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Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
Аннотация:We present the result of ab initio modeling of the Ge(111)-(2 x 1) surface electronic structure in the presence of donor doping atom at certain position in the surface bilayer of (2 x 1) reconstruction. We briefly compare these results with the data of experimental low temperature STM investigations. Ab initio calculations demonstrate that doping atom strongly disturbs local electronic structure. The separate state, most probably split off conduction band, appears in the bandgap. Surface LDOS reveals spatial oscillations in vicinity of foreign atom. We also show that the spatial extent of non-negligible inter-atomic interaction between neighboring donor atoms is not less than 70 angstrom. DOI: 10.1134/S0021364011090128