Prevention of In droplets formation by HCl addition during metal organic vapor phase epitaxy of InNстатья
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Дата последнего поиска статьи во внешних источниках: 17 ноября 2012 г.
Аннотация:The low decomposition temperature of InN and relatively high thermal stability of NH3 necessitate the use of a high NH3/TMIn ratio to prevent In droplet formation on the surface. This work shows that the addition of Cl in the form of HCl (Cl/In molar ratio range of 0.3-1.4) to the growth chamber allows the growth of high quality InN films without the formation of a second In phase at a very low value of the N/In molar inlet ratio (2500). Photoluminescence spectra in the temperature range of 144 to 4.5 K showed a broad spectral band with a cutoff energy close to the reported minimum of the InN band gap energy (0.65 eV). (c) 2007 American Institute of Physics.