Instability of DX-like impurity centers in PbTe : Ga at annealingстатья
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Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
Аннотация:The kinetics of variation in the resistance of PbTe:Ga single crystals, with their Fermi level pinned within the band gap, during annealing at temperatures of up to 400 degrees C was studied for the first time. It is shown that annealing the crystals for only several minutes at 200-250 degrees C leads to the transformation of the material, which is semi-insulating at low temperatures, into a strongly degenerate semiconductor with a free electron concentration of about 10(-18) cm(-3). In other words, annealing results in the decomposition of DX-like impurity centers, which account for Fermi level pinning within the PbTe:Ga band gap. The corresponding activation energy is determined. It is found that high-temperature annealing at about 400 degrees C promotes the tendency to a partial recovery of semi-insulating properties. (C) 2000 MAIK "Nauka/Interperiodica".