Аннотация:The results are given of the experimental investigation into the energy spectra of irradiation-induced defects in the electron-irradiated semiconductors based on IV-VI semiconductors (Pb1-xSnxSe, Pb1-xSnxTe), obtained by a high pressure spectroscopy of localized states. Main attention is paid experimental revealing or the irradiation-induced states, interpretation of effects connected with a redistribution of electrons in irradiated crystals between allowed bands and irradiation-induced states under pressure, construction of the models of reconstruction of the energy spectra of irradiated alloys when changing the tin content and under pressure. Re construction of the function of the density of states ill the resonant irradiation-induced bands and determination of the main parameters of the energy spectra of irradiated Pb1-xSnxSe, Pb1-xSnxTe alloys are discussed.