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NATURE OF CHANGES IN THE PROPERTIES OF PBTEGA DUE TO CHANGES IN THE DEGREE OF DOPINGстатья
Информация о цитировании статьи получена из
Web of Science
Дата последнего поиска статьи во внешних источниках: 29 мая 2015 г.
- Авторы: BELOKON SA, VERESHCHAGINA LN, IVANCHIK II, RYABOVA LI, KHOKHLOV DR
- Журнал: Soviet Physics Semiconductors-Ussr
- Том: 26
- Номер: 2
- Год издания: 1992
- Первая страница: 148
- Последняя страница: 150
- Аннотация: The electrical resistivity and the Hall coefficient PbTe:Ga were measured in the temperature range 4.2-300 K using samples in which the N(Ga) concentration was within the range 0.1-1 at.%. The measurements were carried out both in darkness and in the presence of controlled infrared background radiation. Considerable differences were observed in the nature of the galvanomagnetic properties and in the reaction to infrared background radiation between p-type samples with N(Ga) < 0.4 at.% and n -type samples with N(Ga) less-than-or-equal-to 0.4 at.%. The results obtained were interpreted using a model allowing for an inhomogeneous distribution of the dopant in the bulk of a crystal and for the stabilization of the Fermi level in a certain range of N(Ga).
- Добавил в систему: Хохлов Дмитрий Ремович