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Valence band modification and polarization modes in p-AlGaAs/GaAsP/n-AlGaAs under uniaxial compressionтезисы доклада
- Авторы: Mollaev A.Yu, Minina N.Ya, Kissel H., Bogdanov E.V.
- Сборник: Book of abstracts. 15th International Conference on High Pressure Semiconductor Physics - HPSP15, Montpellier, July 25-27 2012
- Тезисы
- Год издания: 2012
- Место издания: Montpellier, France
- Первая страница: P.!.3
- Аннотация: Numerical calculations of uniaxial stress P influence on the energy spectrum, wave functions and the optical gain of TE and TM polarization modes in strained p-AlxGa1-xAs/GaAs1-yPy/n-AlxGa1-xAs laser diode structures have been performed for a number of samples with different combination of the phosphorous content “y” and the quantum well width L that reveal “light hole up” configuration of hole spectrum in valence band quantum well at P = 0. The Luttinger-Kohn Hamiltonian with strained terms was self consistently solved with Poisson equation for the electrostatic potential using the finite-difference k×p method for samples with y = 0.02; 0.04; 0.10; 0.16 and L = 40; 90; 140 Ǻ under uniaxial stress P along [110] direction and temperature T = 77 K.
- Добавил в систему: Богданов Евгений Владимирович