Effect of doping metals on the kinetics of interaction of SnO2 thin films with oxygenстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
Аннотация:The effect of changing the doping metal (M = Cu, Ni, Pd, Pt) on the kinetics of oxygen exchange reactions of polycrystalline SnO2 thin films with gaseous oxygen was studied in situ by conductance measurements. It was found that preliminary annealing of SnO2-based materials in inert (N-2) and active (100 ppm H2S in N-2) atmospheres affects the kinetics of their reaction with oxygen. Two kinetic models describing the interactions of semiconducting porous materials with gases, i.e., diffusion and surface chemical reactions, are considered.