Structure and electric properties of InTe1-xSex, In1-xGaxTe, and In1-xTlxTe solid solutionsстатья
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Дата последнего поиска статьи во внешних источниках: 7 июля 2016 г.
Аннотация:The local environment of Ga, Tl, and Se atoms in InTe-based solid solutions have been studied by the method of EXAFS spectroscopy. It is shown that these atoms can be regarded as substitutional impurities occupying the In(1), In(2), and Te positions in the InTe structure. Electric measurements showed that the In1-xGaxTe and InTe1-xSex solid solutions are semiconductors at x>0.24 and x>0.15, respectively.