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STRUCTURE AND PROPERTIES OF ZN-IMPLANTED SI NEAR-SURFACE LAYER MODIFICATION DEPENDING ON IRRADIATION FLUENCE OF 132 XE 26+ IONS WITH ENERGY OF 167 MEVстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 12 сентября 2019 г.
- Авторы: Privezentsev V.V., Kulikauskas V.S., Skuratov V.A., Zilova O.S., Burmistrov A.A., Presnyakov M.Y., Goryachev A.V.
- Журнал: Semiconductors
- Том: 53
- Номер: 3
- Год издания: 2019
- Издательство: Springer
- Местоположение издательства: New York
- Первая страница: 313
- Последняя страница: 320
- DOI: 10.1134/S1063782619030163
- Аннотация: Single-crystal n-Si(100) wafers are implanted with 64Zn+ ions with an energy of 50 keV and dose of 5 × 1016 cm–2. Then the samples are irradiated with 132Xe26+ ions with an energy of 167 MeV in the range of fluences from 1 × 1012 to 5 × 1014 cm–2. The surface and cross section of the samples are visualized by scanning electron microscopy and transmission electron microscopy. The distribution of implanted Zn atoms is studied by time-of-flight secondary-ion mass spectrometry. After irradiation with Xe, surface pores and clusters consisting of a Zn–ZnO mixture are observed at the sample surface. In the amorphized subsurface Si layer, zinc and zinc-oxide phases are detected. After irradiation with Xe with a fluence of 5 × 1014 cm–2, no zinc or zinc-oxide clusters are detected in the samples by the methods used in the study.
- Добавил в систему: Затекин Владимир Витальевич