On the possibility of transverse size oscillations in a domain with a high free-electron concentration under the action of a short light pulse on a semiconductorстатья
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Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
Аннотация:Computer simulation is used to demonstrate the possibility of transverse size oscillations in a domain with a high concentration of free electrons under the action of a light pulse on a nonlinearly absorbing semiconductor. The results of computer simulation are confirmed analytically by testing the system stability.