Positive magnetoresistance and hole-hole scattering in GaAs/Al0.5Ga0.5As heterostructures under uniaxial compressionстатья
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Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
Аннотация:Resistance, magnetoresistance, and their temperature dependencies have been investigated in the two-dimensional hole gas at a [001] p-type GaAs/Al0.5Ga0.5As heterointerface under [110] uniaxial compression in the range of low and intermediate magnetic fields. Analysis performed in the frame of hole-hole scattering between carriers in the two subbands of the spin split ground heavy hole state indicates that hole-hole scattering is strongly suppressed by uniaxial compression. The value of the parameter alpha, which determines the mutual hole-hole friction coefficient eta=alpha T-2 reveals three times decrease under uniaxial compression 1.3 kbar. [S0163-1829(98)04948-0].