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Energy spectrum and topology evolution of the Fermi surface of two-dimensional holes in GaAs/Al0.5Ga0.5As heterostructures under uniaxial compression: Theory and experimentстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
- Авторы: Kolokolov K.I., Savin A.M., Beneslavski S.D., Minina N.Y., Hansen O.P.
- Журнал: Physical Review B
- Том: 59
- Номер: 11
- Год издания: 1999
- Издательство: American Physical Society
- Местоположение издательства: United States
- Первая страница: 7537
- Последняя страница: 7545
- DOI: 10.1103/PhysRevB.59.7537
- Аннотация: Valence-band structure and transport properties of two-dimensional holes in p-type GaAs/Al0.5Ga0.5As asymmetric quantum wells under uniaxial compression have been investigated both theoretically and experimentally. The Luttinger-Kohn Hamiltonian with strain terms was self-consistently solved by using the finite-difference k.p method. The Fermi surface was found to become strongly anisotropic under the application of in-plane uniaxial compression, and the differences between the hole concentrations in the ground-state splitted subband and between the corresponding effective masses to decrease. The electrical resistance becomes strongly anisotropic under applied compression, decreasing in the direction parallel to the compression and increasing in the perpendicular direction. [S0163-1829(99)00468-7].
- Добавил в систему: Минина Наталья Яковлевна