Energy spectrum and topology evolution of the Fermi surface of two-dimensional holes in GaAs/Al0.5Ga0.5As heterostructures under uniaxial compression: Theory and experimentстатья
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Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
Аннотация:Valence-band structure and transport properties of two-dimensional holes in p-type GaAs/Al0.5Ga0.5As asymmetric quantum wells under uniaxial compression have been investigated both theoretically and experimentally. The Luttinger-Kohn Hamiltonian with strain terms was self-consistently solved by using the finite-difference k.p method. The Fermi surface was found to become strongly anisotropic under the application of in-plane uniaxial compression, and the differences between the hole concentrations in the ground-state splitted subband and between the corresponding effective masses to decrease. The electrical resistance becomes strongly anisotropic under applied compression, decreasing in the direction parallel to the compression and increasing in the perpendicular direction. [S0163-1829(99)00468-7].