Influence of random electric fields on luminescence yield and kinetics of insulatorsстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
Аннотация:In the present work we investigate theoretically the influence of random electric fields on electron-hole recombination in wide bandgap crystals. Effective Onsager radius and, therefore, electron-hole recombination rate are significantly modified by external electric fields. Electric field distribution functions for point defects and charged dislocations are evaluated analytically. Electron-hole recombination rate decreases with concentration of point defects and dislocations. In simple case of random fields created by charge carriers in highly excited regions the recombination rate is proportional to n2/3 rather than n, where n is the concentration of excitations. Therefore modification of luminescence kinetics is most pronounced at initial stages of relaxation of highly excited regions.