Broadband Near-IR photoluminescence of bismuth-doped pollucite-related phase CsGaGe2O6статья
Статья опубликована в высокорейтинговом журнале
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 20 декабря 2019 г.
Аннотация:Polycrystalline samples of bismuth-doped CsGaGe2O6 with pollucite-related structure were prepared by crystallization from the melt. Intense broadband near-IR photoluminescence was observed in this phase. The photoluminescence emission and excitation spectra are characteristic for Bi+ monocation. Structural disorder in the framework of pollucite-related phase leads to the inhomogeneous broadening of photoluminescence emission spectrum. The influence of melt composition on the stabilization of subvalent Bi+ monocation was discussed in the terms of oxoacidity concept.