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Near-IR Emitting Si Nanocrystals Fabricated by Thermal Annealing of SiNx/Si3N4 Multilayersстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 24 января 2020 г.
- Авторы: Zhigunov D.M., Popov A.A., Chesnokov Yu M., Vasiliev A.L., Lebedev A.M., Subbotin I.A., Yakunin S.N., Shalygina O.A., Kamenskikh I.A.
- Журнал: Applied Sciences
- Том: 9
- Номер: 22
- Год издания: 2019
- Издательство: MDPI
- Местоположение издательства: Basel, Switzerland
- Первая страница: 4725
- DOI: 10.3390/app9224725
- Аннотация: Silicon nanocrystals in silicon nitride matrix are fabricated by thermal annealing of SiNx/Si3N4 multilayered thin films, and characterized by transmission electron microscopy, X-ray reflectivity and diffraction analysis, photoluminescence and X-ray photoelectron spectroscopy techniques. Si nanocrystals with a mean size of about 4 nm are obtained, and their properties are studied as a function of SiNx layer thickness (1.6–2 nm) and annealing temperature (900–1250 °C). The effect of coalescence of adjacent nanocrystals throughout the Si3N4 barrier layers is observed, which results in formation of distinct ellipsoidal-shaped nanocrystals. Complete intermixing of multilayered film accompanied by an increase of nanocrystal mean size for annealing temperature as high as 1250 °C is shown. Near-IR photoluminescence with the peak at around 1.3–1.4 eV is detected and associated with quantum confined excitons in Si nanocrystals: Photoluminescence maximum is red shifted upon an increase of nanocrystal mean size, while the measured decay time is of order of microsecond. The position of photoluminescence peak as compared to the one for Si nanocrystals in SiO2 matrix is discussed.
- Добавил в систему: Жигунов Денис Михайлович