Far-infrared intersubband absorption in p-type GaAs/AlxGa1-xAs single heterojunctions under uniaxial compressionстатья
Статья опубликована в высокорейтинговом журнале
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Аннотация:Theoretical calculations of intersubband light absorption spectra in p-type (001)GaAs/AlxGa1-xAs single heterojunctions under uniaxial compression have been performed. The absorption spectrum is characterized by a set of peaks at zero pressure and suffers considerable transformation under uniaxial compression. At nonzero pressure, the absorption of light with polarization perpendicular to the direction of the compression is smaller then the absorption of light with polarization parallel to the direction of the compression for the most values of photon energy. It has been demonstrated that the dependence of probability of transitions between subbands with the same value of the total angular momentum on the quasi-wave vector differs from the dependence of probability of transitions between subbands with different values of the total angular momentum.