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Manifestation of topological surface electron states in photoelectromagnetic effect induced by terahertz laser radiationстатья
Статья опубликована в высокорейтинговом журнале
Информация о цитировании статьи получена из
Scopus,
Web of Science
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 2 ноября 2016 г.
- Авторы: Galeeva A.V., Egorova S.G., Chernichkin V.I., Tamm M.E., Yashina L.V., Rumyantsev V.V., Morozov S.V., Plank H., Danilov S.N., Ryabova L.I., Khokhlov D.R.
- Журнал: Semiconductor Science and Technology
- Том: 31
- Год издания: 2016
- Издательство: IOP Publishing
- Местоположение издательства: [Bristol, UK], England
- Первая страница: 095010
- Последняя страница: 095010
- DOI: 10.1088/0268-1242/31/9/095010
- Аннотация: We demonstrate that measurements of the photoelectromagnetic effect using terahertz laser radiation may provide a unique opportunity to discriminate between the topological surface states and other highly conductive surface electron states. We performed a case study of mixed (Bi1-xInx)2Se3 crystals undergoing a topological phase transformation due to the transition from the inverse to the direct electron energy spectrum in the crystal bulk at variation of the compositionx. We show that for the topological insulator phase, the photoelectromagnetic effect amplitude is defined by the number of incident radiation quanta, whereas for the trivial insulator phase, it depends on the power in a laser pulse irrespective of its wavelength. We assume that such behavior is attributed to a strong damping of the electron–electron interaction in the topological insulator phase compared to the trivial insulator.
- Добавил в систему: Хохлов Дмитрий Ремович