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Temperature and deformation dependence of p-AlxGa1-xAs/GaAs1-yPy/n-AlxGa1-xAs laser diode wavelength and polarizationтезисы доклада
- Авторы: Bogdanov E.V., Minina N.Ya
- Сборник: Book of abstracts. 17th International Conference on High Pressure Semiconductor Physics - (HPSP-17) & Workshop on High-pressure Study on Superconducting (WHS), Tokio, Japan, August 7-11 2016
- Тезисы
- Год издания: 2016
- Место издания: University of Tokyo Press Tokyo, Japan
- Первая страница: 82
- Аннотация: Numerical calculations and experimental study of uniaxial compression P influence on the energy spectrum, wave functions and the optical gain gTE, gTM of TE and TM polarization modes in p-AlxGa1-xAs/GaAs1-yPy/n-AlxGa1-xAs laser diode structures were performed recently for temperature T = 77 K and P // [110] direction. They indicate a blue shift of the emitted photon energy and decrease of gTM/gTE ratio. Taking into account that laser diodes operate actually at about room temperature and mechanical strains, introduced by their soldering [3] on a heat sink, may arise in different directions, we represent in this work the results of analogous calculations, carried out for compression up to P = 10 kbar along [100] and [001] directions (in-plane and normal to a heterostructure) at 77 K and 300 K, shown together with the previous results.
- Добавил в систему: Богданов Евгений Владимирович