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Modeling the effect of fs light delocalization in Si bulkстатья
Статья опубликована в высокорейтинговом журнале
Статья опубликована в журнале из списка Web of Science и/или Scopus- Авторы: Zavedeev E.V., Kononenko V.V., Gololobov V.M., Konov V.I.
- Журнал: Laser Physics Letters
- Том: 11
- Номер: 3
- Год издания: 2014
- Издательство: Wiley - VCH Verlag GmbH & CO. KGaA
- Местоположение издательства: Germany
- DOI: 10.1088/1612-2011/11/3/036002
- Аннотация: Stimulated by the recently observed strong delocalization of fs radiation in c: Si bulk, the numerical study of fs laser beam propagation and photoexcitation of silicon material has been performed. Two fundamental aspects-dissipation of laser energy due to two-photon absorption (TPA) and nonlinear beam transformation-have been elaborated to clarify the nature of this effect. It has been found that for incident pulse energy 100 mu J and tight beam focusing onto a spot of 6.5 mu m diameter, due to TPA only a small part of the laser pulse energy (<1%) could reach the focal plane inside the Si bulk. As a result, the laser-produced e-h plasma density did not exceed similar to 10(19) cm(-3) and the bulk material damage (permanent modification) threshold was never reached. Additionally, the e-h plasma defocusing has been shown to give a contribution to the light delocalization, significantly widening the pulse propagation path. The data obtained are quite consistent with the experimental results.
- Добавил в систему: Конов Виталий Иванович