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High-mobility organic thin-film transistors based on alpha,alpha '-didecyloligothiophenesстатья
Статья опубликована в высокорейтинговом журнале
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
- Авторы: Halik M., Klauk H., Zschieschang U., Schmid G., Radlik W., Ponomarenko S., Kirchmeyer S., Weber W.
- Журнал: Journal of Applied Physics
- Том: 93
- Номер: 5
- Год издания: 2003
- Издательство: AIP Publishing
- Местоположение издательства: United States
- Первая страница: 2977
- Последняя страница: 2981
- DOI: 10.1063/1.1543246
- Аннотация: We have fabricated organic thin-film transistors and integrated circuits baked on the small-molecule organic semiconductors alpha,alpha'-didecylquaterthiophene, alpha,alpha'-didecylquinquethiophene, and alpha,alpha'-didecylsexithiophene. The organic semiconductors were deposited by thermal evaporation, with solution-processed and cross linked poly-4-vinylphenol serving as the gate dielectric layer. We have found that bottom-contact devices based on these materials have better electrical performance than top-contact devices, presumably due to more efficient carrier injection from bottom contacts due to the presence of the relatively long alkyl chains substituted at the alpha- and omega-positions of the oligothiophene molecules. Bottom-contact transistors have carrier mobility as large as 0.5 cm(2)/V s and on/off current ratio as large as 10(5), and ring oscillators fabricated using bottom-contact transistors and alpha,alpha'didecylsexithiophene as the organic active layer have signal propagation delay as low as 30 mus per stage. (C) 2003 American Institute of Physics.
- Добавил в систему: Пономаренко Сергей Анатольевич