Density of states in the gap, connected with dipole defects in the chalcogenide vitreous semiconductorsстатья
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Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
Аннотация:It is shown, that defects with significant dipole moments, which has been found out as a result of quantum chemical modeling of the chalcogenide glassy semiconductors (CGS), give rise to a tail of density of states, slowly falling down deep into the gap. Under some conditions, the exact type of the energy spectrum of the charge carriers is determined in the frame of a potential that describes a dipole field at large distances.