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Al-, Ga-, Mg-, or Li-doped zinc oxide nanoparticles as electron transport layers for quantum dot light-emitting diodesстатья Исследовательская статья
Статья опубликована в высокорейтинговом журнале
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 24 сентября 2020 г.
- Авторы: Alexandrov Alexei, Zvaigzne Mariya, Lypenko Dmitri, Nabiev Igor, Samokhvalov Pavel
- Журнал: Scientific reports
- Том: 10
- Год издания: 2020
- Издательство: Nature Publishing Group
- Местоположение издательства: United Kingdom
- Номер статьи: 7496
- DOI: 10.1038/S41598-020-64263-2
- Аннотация: Colloidal quantum dots and other semiconductor nanocrystals are essential components of next-generation lighting and display devices. Due to their easily tunable and narrow emission band andnear-unity fuorescence quantum yield, they allow cost-efcient fabrication of bright, pure-color andwide-gamut light emitting diodes (LEDs) and displays. A critical improvement in the quantum dotLED (QLED) technology was achieved when zinc oxide nanoparticles (NPs) were frst introduced asan electron transport layer (ETL) material, which tremendously enhanced the device brightness andcurrent efciency due to the high mobility of electrons in ZnO and favorable alignment of its energybands. During the next decade, the strategy of ZnO NP doping allowed the fabrication of QLEDs witha brightness of about 200 000cd/m2 and current efciency over 60cd/A. On the other hand, the knownZnO doping approaches rely on a very fne tuning of the energy levels of the ZnO NP conduction bandminimum; hence, selection of the appropriate dopant that would ensure the best device characteristicsis often ambiguous. Here we address this problem via detailed comparison of QLEDs whose ETLs areformed by a set of ZnO NPs doped with Al, Ga, Mg, or Li. Although magnesium-doped ZnO NPs arethe most common ETL material used in recently designed QLEDs, our experiments have shown thattheir aluminum-doped counterparts ensure better device performance in terms of brightness, currentefciency and turn-on voltage. These fndings allow us to suggest ZnO NPs doped with Al as the bestETL material to be used in future QLEDs.
- Добавил в систему: Александров Алексей Евгеньевич