Magnetic Modulation of Terahertz Waves via Spin-Polarized Electron Tunneling Based on Magnetic Tunnel Junctions

Zuanming, J.; Jugeng, L.; Zhang, W.; Guo, C.; Wan, C.; Han, X.; Cheng, Z.; Zhang, C.; Balakin, A.V.; Shkurinov, A.P.; Peng, Y.; Guohong, M.; Zhu, Y.; Yao, J.; Zhuang, S.

Статья опубликована в высокорейтинговом журнале

Информация о цитировании статьи получена из Web of Science, Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 19 августа 2020 г.

Авторы: Zuanming Jin, Jugeng Li, Zhang Wenjie, Guo Chenyang, Wan Caihua, Han Xiufeng, Cheng Zhenxiang, Zhang Chao, Balakin Alexey V., Shkurinov Alexander P., Peng Yan, Guohong Ma, Zhu Yiming, Yao Jianquan, Zhuang Songlin
Журнал: Physical Review Applied
Том: 14
Номер: 1
Год издания: 2020
Первая страница: 014032
DOI: 10.1103/PhysRevApplied.14.014032
Аннотация: Magnetic tunnel junctions (MTJs) are a key technology in modern spintronics because they are thebasis of read-heads of modern hard disk drives, nonvolatile magnetic random access memories, and sensorapplications. In this paper, we demonstrate that tunneling magnetoresistance can influence terahertz(THz) wave propagation through a MTJ. In particular, various magnetic configurations between parallelstate and antiparallel state of the magnetizations of the ferromagnetic layers in the MTJ have the effectof changing the conductivity, making a functional modulation of the propagating THz electromagneticfields. Operating in the THz frequency range, a maximal modulation depth of 60% is reached for theparallel state of the MTJ with a thickness of 77.45 nm, using a magnetic field as low as 30 mT. TheTHz conductivity spectrum of the MTJ is governed by spin-dependent electron tunneling. It is anticipatedthat the MTJ device and its tunability scheme will have many potential applications in THz magneticmodulators, filtering, and sensing.
Добавил в систему: Шкуринов Александр Павлович

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Magnetic Modulation of Terahertz Waves via Spin-Polarized Electron Tunneling Based on Magnetic Tunnel Junctionsстатья

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