Population inversion in narrow gap heterostructures due to the interband tunnellingстатья
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Дата последнего поиска статьи во внешних источниках: 2 сентября 2020 г.
Аннотация:The process of interband tunneling in a heterostructure with a wide-gap barrier between two layers of narrow-gap doped semiconductors is investigated. The tunneling probability, intraband and interband current components, and non-equilibrium carrier concentration are calculated using the transfer matrix method and a Dirac-like model for lead chalcogenide-type heterostructures. It is shown that the generation of electron-hole pairs due to interband tunneling may produce a population inversion and laser generation in the near-barrier region