Phonon-assisted interband tunnelling in single-barrier structures with type II heterojunctionsстатья
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Дата последнего поиска статьи во внешних источниках: 17 июля 2020 г.
Аннотация:The interband tunnelling processes assisted by longitudinal optical (LO) phonons in single-barrier structures with type II heterojunctions are investigated. Kane's model and multicomponent wavefunctions corresponding to the initial and final states are used to obtain the matrix element for interband transition by means of emission of LO phonon inside the barrier. It is shown the phonon-assisted interband tunnelling processes may be dominant even if the transitions without scattering are not forbidden.