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Modeling of the current––voltage charateristics of InAs/AlGaSb/GaSb double barrier diodes with interband resonant tunnellingстатья
Информация о цитировании статьи получена из
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Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 17 июля 2020 г.
- Авторы: Lapushkin I., Zakharova A., Gergel V.
- Журнал: Semiconductor Science and Technology
- Том: 14
- Номер: 8
- Год издания: 1999
- Издательство: IOP Publishing
- Местоположение издательства: [Bristol, UK], England
- Первая страница: 731
- Последняя страница: 735
- DOI: 10.1088/0268-1242/14/8/312
- Аннотация: Previously we developed a model for InAs/AlSb/GaSb resonant tunnelling structures (RTSs) and investigated the mechanisms of peak and valley current in these diodes, which exhibit high values of peak-to-valley (P/V) current ratio. Good quantitative agreement with the experiment was achieved both for the values of peak and valley current density for the first time. Here we show that the P/V current ratio can be essentially enlarged by employing the AlGaSb material instead of AlSb. The calculated current-voltage (I-V) characteristic of the InAs/AlGaSb/GaSb RTSs with 30 and 20 Å barriers and 65 Å quantum well showed a P/V current ratio of about 800 at lattice temperature T = 77 K. This value is much greater than all known experimental values of P/V current ratio for RTSs until now. This work was partially supported by the Russian Foundation of Fundamental Research under grant No 97-02-16438-a
- Добавил в систему: Захарова Анна Александровна