Effects of bulk inversion asymmetry and low interface symmetry on the optical properties of broken-gap heterostructuresстатья
Статья опубликована в высокорейтинговом журнале
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Дата последнего поиска статьи во внешних источниках: 24 сентября 2020 г.
Аннотация:We have studied the influence of bulk inversion asymmetry (BIA) and the relativistic part of the low-symmetry interface Hamiltonian (IH) on intersubband optical transitions, induced by linearly polarized light, between strongly hybridized electron-hole states in asymmetrical InAs∕GaSb broken-gap quantum wells grown along the [001] direction. The self-consistent calculations were performed using the Burt-Foreman envelope function theory and a sophisticated eight-band k∙p model Hamiltonian. We found that the BIA and the IH can activate originally forbidden spin-flip optical transitions, and that the strength of the corresponding optical matrix elements depends on the light polarization direction and the quasiparticle in-plane wave vector. Both the BIA and the IH contribute significantly to this effect. When the initial electron-hole states are strongly hybridized, the spin-flip optical transition probability can be of the same order as the probability of the spin-conserved transitions. The BIA results in interface-localized terms in the optical matrix elements due to the material-dependent Kane’s B parameter and produces a strong in-plane anisotropy in the absorption of light polarized along the [11] and [1¯1] directions. The IH also contributes to this effect. We found that the primary contribution to the optical anisotropy comes from the BIA-induced mechanism.
This work was supported by RFBR under grant N 07-02-00680-a (А. А. Захарова руководитель).
На статью есть ссылка авторов Семенихин И.А., Захарова А.А., Chao K.A. в журнале Труды Физико-технологического института, издательство Физико-технологический институт РАН (Москва), том 20, с. 57-65.