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Intersubband Optical Transitions in InAs/GaSb Quantum Wellsстатья
Информация о цитировании статьи получена из
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 8 января 2021 г.
- Авторы: Semenikhin I.A., Zakharova A.A., Chao K.A.
- Журнал: Russian Microelectronics
- Том: 39
- Номер: 1
- Год издания: 2010
- Издательство: Maik Nauka/Interperiodica Publishing
- Местоположение издательства: Russian Federation
- Первая страница: 63
- Последняя страница: 72
- DOI: 10.1134/S1063739710010087
- Аннотация: The effects of electron–hole hybridization, structural asymmetry with respect to spatial inversion, bulk asymmetry, and the interface Hamiltonian upon the optical absorption of linearly polarized light in broken-gap heterostructures are treated with the use of the eight-band Burt–Foreman envelope function theoryand the self-consistent solution of the Schrödinger equation and the Poisson equation. The broken-gap heterostructures, specifically, the AlSb/InAs/GaSb/AlSb quantum wells, grown along the [001] direction offerpromise for the fabrication of various devices. The anisotropy induced by the above listed effects in the dispersion relations of size quantization subbands and in optical matrix elements is established. The bulk asymmetry and the interface Hamiltonian modify the selection rules for intersubband transitions on the exposureof the structures to linearly polarized light. As a result, the initially forbidden spin flip transitions are allowed.This brings about a large number of peaks in the dependence of the absorption coefficient on the photon energy, if the light polarization vector is directed along the axis of growth of the structure. If the light polarization vector is in the plane of the structure, the bulk asymmetry and the interface Hamiltonian inducestrong longitudinal anisotropy of the absorption due to the hybridization of states with oppositely orientedspins. These effects are comprehensively studied for optical transitions involving hybridized electron–holestates in quantum wells grown on InAs. Статья цитируется в работе X.F. Wei, Y.P. Gong, M.S. Long, C.H. Yang and L.W. Liu, Journal: Physics Letters A, Volume 377, Issue 9, 15 March 2013, Pages 727-730. Статья цитируется тоже в работе P. Aceituno, A. Hernández-Cabrera, Superlattices and Microstructures, Volume 111, November 2017, Pages 446-456.
- Добавил в систему: Захарова Анна Александровна