Spin-related phenomena in InAs/GaSb quantum wellsстатья
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Дата последнего поиска статьи во внешних источниках: 19 августа 2020 г.
Аннотация:We have studied theoretically the influence of symmetry breaking mechanisms: structural inversion asymmetry, bulk inversion asymmetry, relativistic and non-relativistic interface Hamiltonian and warping on spin split of levels ΔE and optical absorption of linearly polarized light in asymmetrical quantum wells made from zincblende materials grown on [001] direction. The AlSb/InAs/GaSb/AlSb broken-gap quantum wells with hybridized electron-hole states sandwiched by the AlSb barriers have been considered. We have obtained substantial contributions of these effects into the absolute values of spin split of electron and hole states and spinflip optical transitions for the initial state in-plane wave vectors along low symmetry directions such as [12].
Статья цитируется в работах
Abdulsattar, M.A. , Mohamad, M.M.
Ab initio structural, electronic and vibrational properties of GaSb nanocrystals using diamondoids and large unit cell method
(2015) Asian Journal of Chemistry
Liu, Z. , Zhao, Z.-F. , Guo, H.-M.
Band structure and optical absorption in InAs/GaSb quantum well
(2012) Wuli Xuebao/Acta Physica.
Статья цитируется тоже в работе P. Aceituno, A. Hernández-Cabrera, Superlattices and Microstructures, Volume 111, November 2017, Pages 446-456.
This work was financially supported by the Russian Foundation for Basic Research under grant No. 03-02-16788 а А. А. Захаровой (руководитель).
In addition, it was financially supported by the Russian Foundation for Basic Research under grant No. 07-02-00680-a А. А. Захаровой (руководитель), and by the Royal Swedish Academy of Sciences for cooperation between Sweden and the former Soviet Union.