Аннотация:Some aspects of the relaxation of hot electrons due to equilibrium hole plasma oscillations in a p-type semiconductor are discussed. It is shown that because of intensive heavy-hole to light-hole interband transitions, a marked damping of resonant plasmon emission should be expected. Under these conditions, the scattering of hot electrons by plasma oscillations proceeds mainly through the excitation of a heavy hole into the light-hole band, and the dynamic screening effect widens the energy loss distribution band to the point where the losses may exceed those resulting from monoenergetic resonant plasmon emission.