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Some details of the characteristics of n-p-n double heterostructure bipolar-transistors under conditions of heating and cooling of the electrons and holes in the baseстатья
Информация о цитировании статьи получена из
Scopus,
Web of Science
Дата последнего поиска статьи во внешних источниках: 28 октября 2020 г.
- Автор: Zakharova A.A.
- Журнал: Soviet Microelectronics
- Том: 16
- Номер: 2
- Год издания: 1987
- Первая страница: 82
- Последняя страница: 86
- Аннотация: Heterojunction bipolar transistors (HBTs) with an abrupt emitter-base heterojunction have a number of advantages such as a high emitter efficiency, a low base resistance, etc. which make them promising. The use of structures with two heterojunctions at the edges of the base region allows one to optimize the parameters of the transistor by selection of the materials; such structures can combine in themselves the functions of a transistor and a laser and have mutual exchangeability of the emitter and collector by simply changing the voltages on them. These properties substantially simplify bipolar integrated circuits.
- Добавил в систему: Захарова Анна Александровна