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Carrier transport processes in RTS with type II heterojunctionsстатья
Информация о цитировании статьи получена из
Web of Science
Дата последнего поиска статьи во внешних источниках: 1 декабря 2021 г.
- Авторы: Gergel V., Lapushkin I., Zakharova A., Goronkin H., Tehrani S.
- Сборник: Compound Semiconductors 1996, ed. by Shur M.S. and Suris R.A
- Серия: Institute of Physics Conference Series
- Том: 155
- Год издания: 1997
- Издательство: Institute of Physics Publishing.
- Местоположение издательства: Bristol, England
- Первая страница: 77
- Последняя страница: 80
- Аннотация: Carrier transport processes in resonant tunnelling structures (RTS) with type II heterojunctions are investigated theoretically using a self-consistent solution for potential shape, 3D carrier concentration in contacts and 2D carrier concentration in the quantum well. The resonant tunnelling probability and tunnel current through electron and light hole quasi-bound states in the well are calculated employing the transfer matrix method and Kane's model. Band-bending is obtained taking into account a realistic structure of spacer and contact regions. The transfer Hamiltonian approach is employed to determine the 2D charge density in the quantum well. As a result, good quantitative agreement with the experiment is achieved for InAs/AlSb/InAs and InAs/AlSb/GaSb RTS. The content is published in proceedings of the conference "COMPOUND SEMICONDUCTORS 1996". Статья цитируется в работе Modeling of the current—voltage characteristics of the resonant tunneling structures Gergel V.A., Khrenov G.Yu, Lapushkin I.Yu, Shchamkhalova B.S., Zakharova A.A. в журнале Труды Физико-технологического института, издательство Физико-технологический институт РАН (Москва), том 13, с. 16-25
- Добавил в систему: Захарова Анна Александровна