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TСAD моделирование характеристик кремниевых и кремний-германиевых биполярных транзисторов с учетом радиационных эффектовстатья Исследовательская статья
- Авторы: Петросянц К.О., Кожухов М.В.
- Журнал: Проблемы разработки перспективных микро- и наноэлектронных систем МЭС
- Том: 4
- Номер: 4
- Год издания: 2016
- Издательство: Институт проблем проектирования в микроэлектронике РАН
- Местоположение издательства: Москва
- Первая страница: 2
- Последняя страница: 9
- Аннотация: Si BJT and SiGe HBT performance degradation after irradiation is investigated using a new physical TCAD model built into the Synopsys Sentaurus tool. New equations for the physical parameters t, S, Nit taking into account radiation effects after neutron, proton and gammaradiation are included in the program. The following novelties were introduced into the Si BJT and the SiGe HBT TCAD model with account for radiation effects in: • the improved equations for coefficients of radiation induced degradation of carrier lifetime Kt that account for doping concentration in the active regions; • dependencies of traps concentration Nit(Dy) and surface recombination velocity S(Dy) at Si-SiO2 interfaces separately for EB-spacer and STI/DTI on absorbed dose Dy taken from experiment; • the TCAD model to account for the impact of proton radiation based on additivity of the ionization and displacement effects. Comparison of simulated and experimental characteristics of the Si BJT and the SiGe HBT after subjection to doses up to 1107 rad and fluences up to 11016 cm-2 shows the 10-20% error.
- Добавил в систему: Кожухов Максим Владимирович