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Correlation of Material Structure and Electronic Properties in 2D Platinum-Diselenide-based Devicesстатья
- Авторы: Lukas Sebastian, Kataria Satender, Prechtl Maximilian, Hartwig Oliver, Meledin Alexander, Mayer Joachim, Neumaier Daniel, Duesberg Georg S., Lemme Max C.
- Сборник: 2020 Device Research Conference (DRC)
- Год издания: 2020
- Место издания: IEEE
- DOI: 10.1109/drc50226.2020.9135167
- Аннотация: Platinum diselenide (PtSe 2 ) is a promising two-dimensional (2D) material of the noble-metal dichalcogenides (NMDCs), a subgroup of the transition-metal dichalcogenides (TMDCs). It has been shown to exhibit a high negative piezoresistive gauge factor (GF) [1] and a charge carrier mobility of up to 210 cm 2 /Vs while being air-stable for many months [2] . It can be grown at CMOS-compatible temperatures by thermally assisted conversion (TAC) [3] . PtSe 2 can be tuned from a semiconductor to a semimetal by varying the number of layers [4] – [7] . Experimental data of electronic devices based on PtSe 2 show large variations in the electronic properties that cannot be explained by the material thickness alone. Here, we show that the nanocrystalline structure of TAC-grown PtSe 2 films greatly influences the electronic properties of PtSe 2 -based devices
- Добавил в систему: Меледин Александр Александрович