SPICE-model of SiGe HBT taking into account radiation effects

Авторы: Petrosyants Konstantin O., Kozhukhov Maxim V., Dvomikov Oleg V., Savchenko Eugene M., Budyakov Alexey S.
Сборник: 2018 Moscow Workshop on Electronic and Networking Technologies (MWENT). Proceedings
Серия: Conference MWENT
Год издания: 2018
Издательство: Institute of Electrical and Electronics Engineers
Местоположение издательства: Piscataway, NJ, United States
Первая страница: 1
Последняя страница: 4
Номер статьи: Ch. 380
DOI: 10.1109/mwent.2018.8337211
Аннотация: A unified SPICE macromodel of the SiGe HBTs taking into account radiation effects is presented. It consists of two parts: 1) the standard core model (GP, VBIC, HICUM, MEXTRAM) selected by the designer; 2) an additional subcircuit taking into account the radiation-induced current and voltage shifts. The macromodel was included on SPICE-like simulators. The advantages of SPICE-RAD version of HBT model are: 1) high accuracy of description for device characteristics; 2) convenience to use for IC designers; 3) simplicity of parameter determination. The I-V characteristics of SiGe HBTs irradiated by gamma-rays, protons, neutrons, electrons are measured and simulated. The error for static characteristics is 10-15% and for dynamic characteristics is 15-20% in wide range of doses and/or fluencies.
Добавил в систему: Кожухов Максим Владимирович

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