Radiation- and Temperature-Induced Fault Modeling and Simulation in BiCMOS LSI’s Components using RAD-THERM TCAD Subsystem

Авторы: Petrosyants Konstantin, Kozhukhov Maxim, Popov Dmitry
Сборник: 2019 IEEE 22nd International Symposium on Design and Diagnostics of Electronic Circuits & Systems (DDECS)
Серия: Symposium DDECS
Год издания: 2019
Издательство: Institute of Electrical and Electronics Engineers
Местоположение издательства: Piscataway, NJ, United States
Первая страница: 133
Последняя страница: 136
Номер статьи: 8724651
DOI: 10.1109/ddecs.2019.8724651
Аннотация: A special RAD-THERM version of TCAD subsystem based on Sentaurus Synopsys platform taking into account different types of irradiation (gamma-rays, neutrons, electrons, protons, single events) and external/internal heating effects was developed and validated to forecast the results of natural experiments, and help the designer on with reliability guarantee. The radiation- and temperature-induced faults were modeled and simulated for Si/SiGe BJTs/HBTs and bulk/SOI MOSFETs as BiCMOS LSI's components. The causes of device parameter degradation were discussed.
Добавил в систему: Кожухов Максим Владимирович

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