Extension of standard SPICE SiGe HBT models in the cryogenic temperature range

Авторы: Petrosyants Konstantin O., Dvornikov Oleg V., Prokopenko Nikolay N., Kozhukhov Maxim V.
Сборник: 2017 23rd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)
Серия: Workshop THERMINIC
Год издания: 2017
Издательство: Institute of Electrical and Electronics Engineers
Местоположение издательства: Piscataway, NJ, United States
Первая страница: 1
Последняя страница: 5
Номер статьи: 17467586
DOI: 10.1109/therminic.2017.8233824
Аннотация: Although it has been demonstrated that the SiGe HBTs can achieve faster unloaded circuit speed at cryogenic temperature than at room temperature, modelling of the SiGe HBTs at low temperature has been limited. It is known that the standard SPICE models of bipolar transistor are effective and guarantee the valid results only up to a temperature of minus 100°C. Therefore, in this paper an accurate and robust compact SPICE SiGe HBT model for extended low temperature range up to minus 195°C is presented. Comparison of measurements and simulation results shows an error not more than 10–15%
Добавил в систему: Кожухов Максим Владимирович

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