Electron-Precise Semiconducting ReGa2Ge: Extending the IrIn3 Structure Type to Group 7 of the Periodic Tableстатья
Статья опубликована в высокорейтинговом журнале
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Дата последнего поиска статьи во внешних источниках: 14 октября 2020 г.
Аннотация:Intermetallic compounds with semiconducting propertiesare rare, but they give rise to advanced materials for energyconversion and saving applications. Here, we present ReGa2Ge, a newelectron-precise narrow-gap intermetallic semiconductor. The compoundcrystallizes in the IrIn3 structure type (space group P42/mnm, a= 6.5734(3) Å, c = 6.7450(8) Å, and Z = 4), where Re atoms occupythe Ir site, while Ga and Ge jointly populate the In sites. 69,71Ga nuclearquadrupole resonance spectroscopy indicates nonstatistical partiallyordered distribution of Ga and Ge over two available crystallographicsites; however, the Ga:Ge ratio is exactly 2:1 without noticeablehomogeneity range. The stoichiometry of ReGa2Ge ensures its precise valence electron count, which is 17 e− per formula unit. Accordingly, anarrow energy gap opens up at the Fermi energy in the electronic structure. Electrical resistivity, Seebeck coefficient, and thermalconductivity are in agreement with the semiconducting behavior deduced from the electronic structure calculations and point to prospectivethermoelectric properties at high temperatures. Bonding analysis reveals dominant covalency in Re−E (E = Ga, Ge) and Re−Re interactions.