Delicate tuning of epitaxial VO2 films for ultra-sharp electrical and intense IR optical switching propertiesстатья
Статья опубликована в высокорейтинговом журнале
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Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 1 февраля 2021 г.
Аннотация:Epitaxial VO2 films on r-sapphire substrates with ideal composition, dense structure and superior functional properties were obtained by water-assisted MOCVD from vanadyl hexafluoroacetylacetonate followed by the annealing under optimized conditions. The obtained films exhibit both intense optical switch properties in IR region and unique MIT characteristics: change in resistance by 4.6 orders in the temperature range 40–80 °C, hysteresis width less 0.7 °C and transition width 1.5 °C. The proposed synthetic approach opens new opportunities to fabricate highly sensitive and ultrafast switches for optical, electronic and biomedical devices.