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INJECTION CURRENTS AND THERMAL FIELD POOLE-FRENKEL EFFECT IN SINGLE-CRYSTALS OF (GA2S3)1-X(EU2O3)X SOLID-SOLUTIONSстатья
Информация о цитировании статьи получена из
Web of Science
Дата последнего поиска статьи во внешних источниках: 27 мая 2015 г.
- Авторы: Tagiev B.G., Tagiev O.B., Kasimova G.A.
- Журнал: Soviet Physics Semiconductors-Ussr
- Том: 25
- Номер: 11
- Год издания: 1991
- Первая страница: 1129
- Последняя страница: 1132
- Аннотация: Detailed investigations were made for the first time of the influence of strong electric fields on the electrical conductivity of (Ga2S3)1-x(Eu2O3)x (0.01 less-than-or-equal-to x less-than-or-equal-to 0.07) single crystals emitting strong electroluminescence, photoluminescence, and cathodoluminescence at temperatures 77-400 K. Measurements were made on samples with indium ohmic contacts and a sandwich structure. An analysis of the current-voltage characteristics of these structures to establish that: 1) Ohm’s law was obeyed in fields F from 2 to 3.3 X 10(2) V/cm; 2) carrier injection occurred in fields 3.3 X 10(2) - 3.0 X 10(3) V/cm; 3) the Poole-Frenkel law was obeyed in the range of electric fields 3 x 10(3)-5 X 10(4) V/cm; 4) the tunneling of carriers in fields 4 x 10(4) V/cm, across a potential barrier reduced by e3 F/pi-epsilon-epsilon-0, became easier on increase in temperature.
- Добавил в систему: Тагиев Октай Бахадир