Fluorine doped indium oxide films for silicon solar cellsстатья
Статья опубликована в высокорейтинговом журнале
Информация о цитировании статьи получена из
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Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
Аннотация:The effect of conditions of preparation of the In2O3:F(IFO)/(pp+)Si solar cell (SC) by pyrosol method was systematically studied with the goal to maximize its photovoltage. Heterojunction IFO/(pp+)Si SC was obtained with the efficiency of 16.6% and photovoltage of 617 mV as well as the IFO/(n+pp+)Si SC with the efficiency of 19.2% using the following obtained optimal conditions: film-forming solution: 0.2MInCl3+0.05MNH4F+0.1M H2O in methanol; carrier gas — Ar+5% O2; deposition temperature — 480 °C; duration of deposition — 2 min;
two-minute annealing in argon with sprayed methanol at a temperature of 380 °C.