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Evolution of Pore Ordering during Anodizing of Aluminum Single Crystals: In Situ Small-Angle X-ray Scattering Studyстатья Исследовательская статья
Информация о цитировании статьи получена из
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Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 17 июня 2021 г.
- Авторы: Roslyakov Ilya V., Chumakov Andrei P., Eliseev Andrei A., Leontiev Alexey P., Konovalov Oleg V., Napolskii Kirill S.
- Журнал: Journal of Physical Chemistry C
- Том: 125
- Номер: 17
- Год издания: 2021
- Издательство: American Chemical Society
- Местоположение издательства: United States
- Первая страница: 9287
- Последняя страница: 9295
- DOI: 10.1021/acs.jpcc.1c01482
- Аннотация: Self-organization of pores in anodic aluminum oxide (AAO) is a unique phenomenon attracting significant interest from both fundamental and practical points of view. Although the influence of crystallographic orientation of Al substrate on the degree of pore ordering has been clearly demonstrated, the information about the kinetics of selforganization in AAO formed on various low-index facets of Al is absent. Here, the kinetics of pore ordering during anodizing of lowindex surfaces of Al single crystals is studied by using the in situ small-angle X-ray scattering technique. The fastest decrease in the dispersion of pore growth direction is found in the case of anodizing of the Al(100) substrate. To obtain the comparable out-of-plane pore ordering in the case of Al(111) anodizing, the charge density should be doubled. On the contrary, on the Al(111) the fastest kinetics of in-plane orientational pore ordering is observed. The average domain size in the AAO films grown on Al(100) and Al(110) is limited by about 20 lattice periods, whereas the unlimited growth of the domains is observed in the case of the Al(111) substrate. The pore organization into hexagonal domains is found to be much faster than the development of long-range in-plane orientational pore order.
- Добавил в систему: Росляков Илья Владимирович