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A-site tailoring in the vacancy-ordered double perovskite semiconductor Cs2SnI6 for photovoltaic applicationстатья
Статья опубликована в высокорейтинговом журнале
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 23 сентября 2021 г.
- Авторы: Umedov Shodruz T., Khadka Dhruba B., Yanagida Masatoshi, Grigorieva Anastasia, Shirai Yasuhiro
- Журнал: Solar Energy Materials and Solar Cells
- Том: 230
- Год издания: 2021
- Издательство: Elsevier BV
- Местоположение издательства: Netherlands
- Первая страница: 111180
- DOI: 10.1016/j.solmat.2021.111180
- Аннотация: Air-stable caesium tin iodide (Cs2SnI6) double perovskite are highly desirable for substituting the lead-based halide perovskite solar cells. In this work, we have investigated the effect of A-site tailoring in Cs2SnI6 by adding monovalent cation (Rb and Ag) on film growth properties, (morphology, structural properties, opto-physical properties), optoelectronic properties, and device characteristics. The crystal analysis suggests that the A-site additives suppress CsI secondary phase in (Cs1-xAx)2SnI6 film for x<0.5 whereas multiple secondary phases occur in higher additive content. The opto-physical properties reveal a small change in bandgap energy for alloyed film and excellent thermal stability in ambient air. The inverted device structure ITO/CuI/Cs2SnI6-alloyed/PCBM/AZO/Ag, for the first time, demonstrated the improvement in device parameters (with VOC 0.38 V and efficiency of 0.66%) for the alloyed films. The capacitance analysis reveals that the high defect density in bulk as well as at the interface (Nt>1019 cm−3) has a deleterious effect on the device performance. In this work, we underline insight into the A-site tailoring of Cs2SnI6 double perovskite and the dominant limiting factors for getting high device performance.
- Добавил в систему: Умедов Шодруз Турабекович