Argon-oxygen ion-plasma treatment modifies the surface composition and photoluminescence spectrum of porous siliconстатья
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Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
Авторы:
Kostishko B.M.a,
Drozdov A.V.a,
Shibaev P.V.b ,
Kostishko A.E.a
Журнал:
Technical Physics Letters
Том:
26
Номер:
10
Год издания:
2000
Издательство:
Pleiades Publishing, Ltd
Местоположение издательства:
Road Town, United Kingdom
Первая страница:
919
Последняя страница:
922
Аннотация:
We have studied changes in the surface composition and photoluminescence spectrum of porous silicon (por-Si) during the ion-plasma etching of samples in an argon-oxygen gas mixture. This treatment leads to the passivation of the surface of quantum filaments by residual fluorine and the formation of silicon oxide. The source of fluorine atoms are HF molecules retained in the volume of pores upon the por-Si structure formation by chemical etching. Increase in the fluorine concentration is accompanied by the growth in intensity of the blue-green band and broadening of the red band in the photoluminescence spectrum of por-Si. © 2000 MAIK "Nauka/Interperiodica".
Добавил в систему:
Шибаев Петр Валерьевич