Atomic geometry and electron structure of the GaTe(102 ̄) surfaceстатья
Статья опубликована в высокорейтинговом журнале
Информация о цитировании статьи получена из
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Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
Аннотация:The natural cleavage plane (102 ̄) of a layered compound GaTe possesses unique properties due to high in-plain anisotropy with the corresponding lattice constant of 1.18 nm. The structure and electronic properties of the GaTe (102 ̄) clean surfaces have been studied both experimentally, using photoelectron spectroscopy, low-energy electron diffraction (LEED), and scanning tunneling microscopy, and theoretically, using density functional theory. The results clearly indicate a monoclinic structure of the surface layer, with no pronounced reconstruction or relaxation of the surface observed. This finding contradicts the previous LEED study, where a surface monoclinic-hexagonal phase transformation was reported. The GaTe (102 ̄) surface is found to be quite stable in time and resistant to oxidation. This makes gallium monotelluride an attractive substrate for growth of one-dimensional metal structures.