High sensitive, linear and thermostable pressure sensor utilizing bipolar junction transistor for 5 kPa

Basov, M.

Информация о цитировании статьи получена из Web of Science, Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 17 августа 2021 г.

Автор: Basov Mikhail
Журнал: Physica Scripta
Том: 96
Номер: 6
Год издания: 2021
Издательство: Royal Swedish Academy of Sciences
Местоположение издательства: Sweden
Первая страница: 065705
Последняя страница: 065705
DOI: 10.1088/1402-4896/abf536
Аннотация: Research of pressure sensor chip utilizing novel electrical circuit with bipolar-junction transistor-based (BJT) piezosensitive differential amplifier with negative feedback loop (PDA-NFL) for 5 kPa differential range was done. The significant advantages of developed chip PDA-NFL in the comparative analysis of advanced pressure sensor analogs, which are using the Wheatstone piezoresistive bridge, are clearly shown. The experimental results prove that pressure sensor chip PDA-NFL with 4.0 × 4.0 mm2 chip area has sensitivity S = 11.2 ± 1.8 mV/V/kPa with nonlinearity of 2KNLback = 0.11 ± 0.09%/FS (pressure is applied from the back side of pressure sensor chip) and 2KNLtop = 0.18 ± 0.09%/FS (pressure is applied from the top side of pressure sensor chip). All temperature characteristics have low errors, because the precision elements balance of PDA-NFL electric circuit was used. Additionally, the burst pressure is 80 times higher than the working range.
Добавил в систему: Басов Михаил Викторович

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High sensitive, linear and thermostable pressure sensor utilizing bipolar junction transistor for 5 kPaстатья

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