|
ИСТИНА |
Войти в систему Регистрация |
ИПМех РАН |
||
Contact resistance measurements for the Ge2Sb2Te5 thin filmsстатья
Дата последнего поиска статьи во внешних источниках: 24 ноября 2021 г.
- Авторы: Yakubov A., Sherchenkov A., Lazarenko P., Babich A., Terekhov D., Dedkova A.
- Журнал: Chalcogenide Letters
- Том: 17
- Номер: 1
- Год издания: 2020
- Издательство: National Institute of Materials Physics, National Institute of Optoelectronics
- Местоположение издательства: Romania
- Первая страница: 1
- Последняя страница: 8
- Аннотация: In this study contact resistances between the Ge2Sb2Te5 thin films and TiN/W electrodes were investigated by the transmission line model method. The influence of the heat treatment on the electrical characteristics of the Ge2Sb2Te5/electrode was investigated. Heat treatment at 150 degrees C leads to a significant drop in contact resistance due to crystallization of the thin Ge2Sb2Te5 film. The contribution of the contact resistance to the total contact resistance of the Ge2Sb2Te5 and TiN/W contact was analyzed and showed that the contribution of the contact resistance to the total resistance sufficiently increases for the Ge2Sb2Te5 film in the crystalline state.
- Добавил в систему: Дедкова Анна Александровна